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PD - 94804A
AUTOMOTIVE MOSFET
Features
l l l l l l
Logic Level Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
G
HEXFET(R) Power MOSFET
D
IRL1404Z IRL1404ZS IRL1404ZL
VDSS = 40V
RDS(on) = 3.1mW ID = 75A
S
Description
Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
TO-220AB IRL1404Z
D2Pak IRL1404ZS
TO-262 IRL1404ZL
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2/2/04
IRL1404Z/S/L
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Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25C, L = 0.079mH, RG = 25W, IAS = 75A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical This value determined from sample failure population. 100% This is only applied to TO-220AB package. When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994. tested to this value in production. repetitive avalanche performance.
2
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IRL1404Z/S/L
1000
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Fig 2. Typical Output Characteristics
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Fig 3. Typical Transfer Characteristics
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Fig 4. Typical Forward Transconductance vs. Drain Current
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Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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Fig 10. Normalized On-Resistance vs. Temperature
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRL1404Z/S/L
15V
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Fig 13b. Gate Charge Test Circuit
Fig 14. Threshold Voltage vs. Temperature
6
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IRL1404Z/S/L
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Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. DT = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) P D (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*t av
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Fig 16. Maximum Avalanche Energy vs. Temperature
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IRL1404Z/S/L
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
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Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
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+
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Fig 18a. Switching Time Test Circuit
VDS 90%
10% VGS
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Fig 18b. Switching Time Waveforms
8
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IRL1404Z/S/L
TO-220AB Package Outline
2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405)
Dimensions are shown in millimeters (inches)
3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
4 15.24 (.600) 14.84 (.584)
1.15 (.045) MIN 1 2 3
LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN
14.09 (.555) 13.47 (.530)
4.06 (.160) 3.55 (.140)
3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES:
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.92 (.115) 2.64 (.104)
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
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For GB Production
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9
IRL1404Z/S/L
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
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For GB Production
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10
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IRL1404Z/S/L
2- COLLECTOR
3- EMITTER
IGBT
1- GATE
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@ 9 P 8 A @ U 6 9
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Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
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TO-262 Package Outline
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11
IRL1404Z/S/L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039) 24.40 (.961) 3
30.40 (1.197) MAX. 4
TO-220AB packages are not recommended for Surface Mount Application.
Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IRs Web site.
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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 2/04
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